TY  - BOOK
AU  - Li,Sheng S.
TI  - Semiconductor physical electronics
T2  - Microdevices
SN  - 0306441578
AV  - TK7871.85 .L495 1993
U1  - 621.3815/2 20
PY  - 1993///
CY  - New York
PB  - Plenum
KW  - Semiconductors
KW  - Solid state physics
KW  - Semi-conducteurs
KW  - Physique de l'�etat solide
KW  - semiconductor
KW  - aat
KW  - fast
KW  - Festk�orperphysik
KW  - gnd
KW  - Halbleiter
KW  - Halfgeleiders
KW  - gtt
KW  - ram
KW  - Semiconducteurs
N1  - Includes bibliographical references and index; Ch. 1. Classification of Solids and Crystal Structure. 1.2. The Bravais Lattice. 1.3. The Crystal Structure. 1.4. Miller Indices and the Unit Cell. 1.5. The Reciprocal Lattice and Brillouin Zone. 1.6. Types of Crystal Bindings. 1.7. Defects in a Crystalline Solid -- Ch. 2. Lattice Dynamics. 2.2. The One-Dimensional Linear Chain. 2.3. Dispersion Relation for a Three-Dimensional Lattice. 2.4. Concept of Phonons. 2.5. The Density of States and Lattice Spectrum. 2.6. Lattice Specific Heat. 2.7. Elastic Constants and Velocity of Sound -- Ch. 3. Semiconductor Statistics. 3.2. Maxwell-Boltzmann (M-B) Statistics. 3.3. Fermi-Dirac (F-D) Statistics. 3.4. Bose-Einstein (B-E) Statistics. 3.5. Statistics in the Shallow-Impurity States -- Ch. 4. Energy Band Theory. 4.2. The Bloch-Floquet Theorem. 4.3. The Kronig-Penney Model. 4.4. The Nearly-Free Electron Approximation. 4.5. The Tight-Binding (LCAO) Approximation. 4.6. Energy Band Structures for Semiconductors. 4.7. The Effective Mass Concept. 4.8. Energy Band Structure and Density of States in a Superlattice -- Ch. 5. Equilibrium Properties of Semiconductors. 5.2. Densities of Electrons and Holes in a Semiconductor. 5.3. Intrinsic Semiconductors. 5.4. Extrinsic Semiconductors. 5.5. Ionization Energy of a Shallow Impurity Level. 5.6. Hall Effect, Hall Mobility, and Electrical Conductivity. 5.7. Heavy Doping Effects in a Degenerate Semiconductor -- Ch. 6. Excess Carrier Phenomenon in Semiconductors; 6.2. Nonradiative Recombination: Shockley-Read-Hall Model. 6.3. Band-to-Band Radiative Recombination. 6.4. Band-to-Band Auger Recombination. 6.5. Basic Semiconductor Equations. 6.6. Charge-Neutrality Conditions. 6.7. The Haynes-Shockley Experiment. 6.8. Minority Carrier Lifetimes and Photoconductivity Experiment. 6.9. Surface States and Surface Recombination Velocity. 6.10. Deep-Level Transient Spectroscopy (DLTS) Technique. 6.11. Surface Photovoltage (SPV) Technique -- Ch. 7. Transport Properties of Semiconductors. 7.2. Galvanomagnetic, Thermoelectric, and Thermomagnetic Effects. 7.3. Boltzmann Transport Equation. 7.4. Derivation of Transport Coefficients. 7.5. Transport Coefficients for the Mixed Conduction Case. 7.6. Transport Coefficients for Some Semiconductors -- Ch. 8. Scattering Mechanisms and Carrier Mobilities in Semiconductors. 8.2. Differential Scattering Cross Section. 8.3. Ionized Impurity Scattering. 8.4. Neutral Impurity Scattering. 8.5. Acoustic Phonon Scattering. 8.6. Optical Phonon Scattering. 8.7. Scattering by Dislocations. 8.8. Electron and Hole Mobilities in Semiconductors. 8.9. Hot Electron Effects in a Semiconductor -- Ch. 9. Optical Properties and Photoelectric Effects. 9.1. Optical Constants of a Solid. 9.2. Free-Carrier Absorption Process. 9.3. Fundamental Absorption Process. 9.4. The Photoconductive Effect. 9.5. The Photovoltaic (Dember) Effect. 9.6. The Photomagnetoelectric Effect -- Ch. 10. Metal-Semiconductor Contacts; 10.2. Metal Work Function and Schottky Effect. 10.3. Thermionic Emission Theory. 10.4. Ideal Schottky Barrier Contact. 10.5. Current Flow in a Schottky Barrier Diode. 10.6. I-V Characteristics of a Silicon and a GaAs Schottky Diode. 10.7. Determination of Barrier Height. 10.8. Enhancement of Effective Barrier Height. 10.9. Applications of Schottky Diodes. 10.10. Ohmic Contacts -- Ch. 11. p-n Junction Diodes. 11.2. Equilibrium Properties of a p-n Junction Diode. 11.3. p-n Junction Under Bias Conditions. 11.4. Minority Carrier Distribution and Current Flow. 11.5. Diffusion Capacitance and Conductance. 11.6. Minority Carrier Storage and Transient Behavior. 11.7. Zener and Avalanche Breakdowns. 11.8. Tunnel Diode. 11.9. p-n Heterojunction Diodes. 11.10. Junction Field-Effect Transistors -- Ch. 12. Photonic Devices. 12.2. Photovoltaic Devices. 12.3. Photodetectors. 12.4. Light-Emitting Diodes (LEDs). 12.5. Semiconductor Laser Diodes -- Ch. 13. Bipolar Junction Transistor. 13.2. Basic Structures and Modes of Operation. 13.3. Current-Voltage Characteristics. 13.4. Current Gain, Base Transport Factor, and Emitter Injection Efficiency. 13.5. Modeling of a Bipolar Junction Transistor. 13.6. Switching Transistor. 13.7. Advanced Bipolar Transistor. 13.8. Thyristors -- Ch. 14. Metal-Oxide-Semiconductor Field-Effect Transistors. 14.2. An Ideal Metal-Oxide-Semiconductor System. 14.3. Oxide Charges and Interface Traps. 14.4. The MOS Field-Effect Transistors; 14.5. Charge-Coupled Devices -- Ch. 15. High-Speed III-V Semiconductor Devices. 15.2. Metal-Semiconductor Field-Effect Transistors. 15.3. Modulation-Doped Field-Effect Transistors (MODFETs). 15.4. Heterojunction Bipolar Transistor. 15.5. Hot Electron Transistors. 15.6. Resonant Tunneling Devices. 15.7. Transferred-Electron Devices
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